j.e.iizu ^zmi-conductoi ^pioaucti, dnc. 20 stern ave. telephone: (973) 376-2922 springfield, new jersey 07081 (212) 227-6005 u.s.a. fax: (973) 376-8960 WW263 (npn) & ww264 (pnp) silicon complementary transistors darlington power amplifier description: the WW263 (npn) and ww264 (pnp) are complementary silicon darlington power transistors in a to220 type package designed for general purpose amplifier and low-speed switching applications. features: ? high dc current gain: hfe = 2500 typ (WW263) = 3500 typ (ww264) ? collector-emitter sustaining voltage: vceo(sus) = 100v min ? low collector-emitter saturation voltage: vce(sat)= 2vmax@lc = 5a ? monolithic construction with built-in base-emitter shunt resistor absolute maximum ratings: collector-emitter voltage, vceo 100v collector-base voltage, vcb 100v emitter-base voltage, veb 5v collector current, iq continuous 10a peak 15a base current, ib 250ma total power dissipation (tc = +25c), pd 65w derate above 25c 0.52w/c total power dissipation (ta = +25c), pd 2w derate above 25c 0.016w/c operating junction temperature range, tj -65 to +150c storage temperature range, tstg -65 to +150c thermal resistance, junction-to-case, rthjc 1.92c/w thermal resistance, junction-to-ambient, rthja 62.5c/w nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical characteristics: (tc = +25c unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics collector-emitter sustaining voltage collector cutoff current emitter cutoff current vceo(sus) 'ceo 'cex iebo lc = 200ma, ib = 0, note 1 vce = 100v, ib = 0 vce = 100v,veb(off) = 1.5v vce = 100v, veb(0ff) = 1.5v, tc = +125c vbe = 5v, lc = 0 100 - - - - - - - - - - 1.0 300 3 5 y ma ha ma ma on characteristics (note 1) dc current gain collector-emitter saturation voltage base-emitter on voltage hfe vce(sat) vbe(on) lc = 5a, vce = 3v lc = 10a, vce = 3v ic = 5a, ib = 0.01a lc= 10a, ib = 0.1a lc = 3a, vce = 3v ic = 10a, vce = 3v 1000 100 - - - - - - - - - - 20000 - 2 3 2.8 4.5 v v v v dynamic characteristics small-signal current gain output capacitance small-signal current gain ihfel c0b hfe lc=1a,vce = 5v,ftest=1mhz vcb = 10v, ie = 0, f=1mhz lc = 1a, vce = 5v, f = 1khz 20 - 1000 - - - - 200 - pf note 1. pulse test: pulse width < 300ns, duty cycle < 2%. .no" -h (2.79) .500"(i2. max .500"(i2.7) min. i .420" (10.67) max. .i47"(3.73) max. dia. tab connects to pin 2 .ol8"(.457) max. .i00"(2.54) c(2)
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